Systek™ BAF Ni
Next-generation boric acid-free nickel barrier technology enables excellent coplanarity for high performance packages.
Contact UsProduct Overview
Systek™ BAF Ni is an easy to control nickel barrier layer electroplating process. It delivers pure, ductile, fine-grained, low stress nickel deposits with excellent coplanarity, meeting the requirements of next-generation semiconductor packages. Part of our Panel Level Packaging (PLP) Portfolio, the chemistry contains no boric acid, in compliance with specific regulatory needs.
It meets the exacting performance and manufacturing requirements of advanced packaging architectures. Systek BAF Ni is an effective barrier metal, limiting conversion of solder to intermetallic compounds (IMC), resulting in no void formation at the interface. With excellent via filling capability, the chemistry delivers a smooth surface at lower operating temperatures, enhancing cost of ownership.
Product Features
Sustainability and Regulatory Compliance
Boric acid-free for compliance with Substances of Very High Concern (SVCH) and Registration, Evaluation, Authorization and Restriction of Chemicals (REACH) regulations, enabling manufacturers to meet their environmental goals.
Compatibility with high-purity semiconductor environments
Meets the exacting performance and manufacturing requirements associated with wafer plating.
Tunable process control for uniform coatings with predictable stress
Film stress can be tuned via temperature control and BAF Ni-A concentration.
Bump and Pillar Plating
Systek BAF Ni exhibits a smooth deposit surface and uniform bump shape, comparable to a traditional nickel-plating process.
Best-in-Class Boric Acid-Free Barrier Technology for High Performance Packages
Systek BAF Ni provides an effective diffusion barrier, limiting the conversion of solder to IMC. This effective barrier metal eliminates void formation at the interface enhancing reliability performance for advanced packages.
Barrier Plating
Systek BAF Ni provides a consistent barrier coating on complex geometries with tight process control for high-performance semiconductor applications.
